Research Focus
Consideration and Mitigation of Electromigration in Layout Design

Due to shrinking feature sizes, electromigration (EM) is becoming a growing concern for the reliability of integrated circuits. High current densities cause atom movement within the metal interconnects. This leads to the development of voids that are a typical reason for interconnect failure. State-of-the-art verification methods check a layout design for the maximum allowed current density (und thus its EM robustness). This verification step is conducted after layout synthesis. Yet, this approach is limited by the underlying EM models that only inaccurately capture the physical nature of EM. Therefore, high safety margins must be applied. Moreover, the number of nets affected by EM is continuously rising. The resulting repair effort is getting too high to handle.

In order to enable migration robust IC design in future technologies, we develop a novel routing approach at IFTE. This approach considers migration robustness already during layout synthesis and relies on precise, physics-based models.

First proactive EM-robust router:
Other research topics:
Theoretical Investigation on the development of current densities (Source: ITRS Roadmap)
Simulation of current density profiles
Experimental verification of EM degradation
Textbook on EM-aware IC design

Fundamentals of Electromigration-Aware Integrated Circuit Design
Jens Lienig, Matthias Thiele
Springer International Publishing

ISBN 978-3-319-73557-3
eBook ISBN 978-3-319-73558-0
DOI 10.1007/978-3-319-73558-0
Book page

PhD theses on electromigration:
Other EM-related publications:
Contact:

Dipl.-Ing. Susann Rothe
Dr.-Ing. Matthias Thiele
Prof. Dr.-Ing. habil. Jens Lienig

  Last updated: 2023-04-05